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U6802B
Triple Driver for High-Temperature Application
Description
The triple-driver IC includes three non-inverted and current-limited output stages with an open collector. Each output can sink 20 mA, parallel output operation is possible. The digital inputs have Schmitt-trigger function with pull-up resistors to 5 V.
Features
D Three input comparators with Schmitt-trigger
characteristic
D ESD protection according to human body model: D Output stages:
"2000 V (C = 100 pF, R = 1.5 kW)
Short-circuit protected Load-dump protected @ 1 kW No crosstalk on adjacent channels Jump start possible
D Input clamping current capability of"10 mA D Integrated protection cells (EMC, ESD, RF)
dedicated to all input stages
D Reset with hysteresis at low voltage
Ordering Information
Extended Type Number U6802B-FP T6802B Package SO8 Bare die Remarks Bond diagram on request
Block Diagram / Applications
VO1 1 VO2 3 VO3 4
2 Undervoltage detection VS=5 V 8 VI1 6 VI2 Figure 1. Block diagram 5 VI3
13329
GND
VS
7
VS
Rev. A3, 16-Apr-99
1 (5)
U6802B
Pin Description
VO1 GND VO2 VO3 VI1 VS VI2 VI3
1
8
2
7
3
6
4
13330
5
Pin 1 2 3 4 5 6 7 8
Symbol VO1 GND VO2 VO3 VI3 VI2 VS VI1
Function Output 1 Ground Output 2 Output 3 Input 3 Input 2 Supply voltage 5 V Input 1
Figure 2. Pinning
Basic Circuitry
The integrated circuit U6802B requires a stabilized supply voltage (VS = 5 V"5%) to comply with its electrical characteristics. An external buffer capacitor of C = 100 nF is recommended. An integrated 14-V Zener diode between VS and ground protects the supply pin. All input stages are provided with an integrated 250-kW pull-up resistor and can be directly connected to a microcontroller. All output stages are open collectors - each capable of sinking 20 mA. Recommended external components: Pull-up resistor, R = 1 kW Capacitor to GND, C = 470 pF, see figure 3
Current Limitation of the Output Stages
A temperature-dependent current limitation in the range of 25 mA to 100 mA protects the stages in case of a short.
High-Temperature Application
For direct assembly to a heat sink (chip on board, chip on silicon), the die version T6802B is available on request.
Transients and Load Dump
An integrated 28-V Zener diode protects each output stage against transients and load dump (Schaffner pulses). With the help of external 1-kW resistor, the output transistor is capable to handle the corresponding current which flows during each of these conditions. Apart from that, outputs are short circuit and overload protected.
Functional Description
General
ON state: Low level at the input stage activates the corresponding output stage. OFF state: The internal pull-up resistor provides high level to the input comparator and deactivates the output stage. 7-V Zener diodes between each input pin and GND are capable of mA clamping currents without crosstalk on adjacent input stages. A total clamping current of mA should be observed with respect to the power dissipation.
Low-Voltage Detection
When the supply voltage is switched on, a power-on reset pulse is generated internally which disables all output stages until a defined supply-voltage level is reached. The low-voltage detection is provided with a hysteresis of Vhyst = 0.5 V typically.
"10
"30
2 (5)
Rev. A3, 16-Apr-99
U6802B
VS=5 V 100 nF VI1 Microcontroller VI2 VI3 VO1 VBatt Load R R R 3x 1k
U6802B
Triple IC
VO2 VO3 C C C 3x 470 pF
13331
Figure 3. Application schematic
Absolute Maximum Ratings
Parameters Supply voltage Ambient temperature range Storage temperature range Maximum junction temperature Symbol VS Tamb Tstg Tj Value 7.0 -40 to +125 -50 to +150 +150 Unit V _C _C _C
Thermal Resistance
Parameters Junction ambient Symbol RthJA Value 160 Unit K/W
Rev. A3, 16-Apr-99
3 (5)
U6802B
Electrical Characteristics
VS = 5 V"5%, Tamb = 27_C, reference point Pin 2 (GND), unless otherwise specified, see figures 1 and 3. Parameters Supply Supply voltage Supply current Low-voltage detection threshold Low-voltage hysteresis Input Pins 5, 6 and 8 II = 10 mA VI II RI VI VI Vhyst VO ILeak VSat Ilimit td 6.7 170 250 3.3 1.8 1.5 Z-diode protection voltage Z-diode clamping current Pull-up resistor Switching threshold: Hysteresis Output Pins 1, 3 and 4 IO = 10 mA 26.5 5 (IO = 20 mA) (470 pF, 1 kW, 20 V) 2.5 0.7 100 5 V pF Z-diode protection voltage Integrated capacitor Leakage current Saturation voltage Current limitation Propagation delay Pin 7 Inputs open Inputs closed to GND ON OFF VS IS IS VTH(ON) VTH(OFF) Vhyst 4.75 0.8 7 3.7 3.0 0.55 5.25 3.2 13 4.6 3.8 1.05 V mA mA V V V V mA kW V V V Test Conditions / Pins Symbol Min. Typ. Max. Unit
"10
305
8.5
OFF ON
mA
V mA
25
ms
Package Information
Package SO8
Dimensions in mm
5.00 4.85 1.4 0.4 1.27 3.81 8 5 0.25 0.10 0.2 3.8 6.15 5.85 5.2 4.8 3.7
technical drawings according to DIN specifications 13034
8
5
4 (5)
Rev. A3, 16-Apr-99
U6802B
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify TEMIC Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2594, Fax number: 49 ( 0 ) 7131 67 2423
Rev. A3, 16-Apr-99
5 (5)

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